n electrical characteristics (tc = 25?c) 2sk1834 silicon n-channel power f-mos n features l avalanche energy capability guaranteed : eas > 15mj l v gss =30v guaranteed l high-speed switching : t f = 25ns l no secondary breakdown n applications l non-contact relay l solenoid drive l motor drive l control equipment l switching mode regulator n absolute maximum ratings (tc = 25?c) unit : mm 1 : gate 2 : drain 3 : source to-220 full pack package (a) power f-mos fets 2sk1834 parameter drain-source breakdown voltage gate-source voltage drain current dc pulse avalanche energy capability allowable power t c = 25?c dissipation ta= 25?c channel temperature storage temperature * l= 7.5mh, i l =2a, v dd = 50v, 1 pulse symbol v dss v gss i d i dp eas * p d t ch t stg rating 800 30 2 4 15 40 2 150 C55 to +150 unit v v a a mj w ?c ?c parameter drain-source cut-off current gate-source leakage current drain-source breakdown voltage gate threshold voltage drain-source on-resistance forward transadmittance diode forward voltage input capacitance output capacitance feedback capacitance turn-on time fall time turn-off time (delay time) channel-case heat resistance symbol i dss i gss v dss v th r ds(on) | y fs | v dsf c iss c oss c rss t on t f t d(off) r th(ch-c) condition v ds = 640v, v gs = 0 v gs =30v, v ds = 0 i d =1ma, v ds = 0 v ds =25v, i d =1ma v gs =10v, i d =1a v ds = 25v, i d =1a i dr = 2a, v gs = 0 v ds = 20v, v gs = 0, f=1mhz v gs =10v, i d =1a v dd =200v, r l =200 w min 800 2 0.7 typ 4.8 1.1 350 60 25 35 25 60 max 0.1 1 5 7 C1.3 3.125 unit ma a v v w s v pf pf pf ns ns ns ?c/w 10.0 0.2 5.5 0.2 7.5 0.2 16.7 0.3 0.7 0.1 14.0 0.5 solder dip 4.0 0.5 +0.2 - 0.1 1.4 0.1 1.3 0.2 0.8 0.1 2.54 0.25 5.08 0.5 2 13 2.7 0.2 4.2 0.2 4.2 0.2 ?.1 0.1
eas C t j i d Cv ds |y fs | C i d r ds (on) C i d i d Cv gs c iss, c oss, c rss Cv ds t on, t f, t d (off) C i d p d Cta area of safe operation (aso) power f-mos fets 2sk1834 drain-source voltage v ds ( v ) drain current i d ( a ) t c =25?c 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 102030405060 7.0v 6.5v 6.0v 5.0v 5.5v 40w v gs =15v 10v drain current i d ( a ) forward transadmittance | y fs | ( s ) v ds =25v t c =25?c 0 0.5 1.0 1.5 2.0 2.5 0 2.5 2.0 1.5 1.0 0.5 drain current i d ( a ) drain-source on-resistance r ds(on) ( ) 0 12 05 4 3 2 1 (1)v gs =10v (2)v gs =15v t c =25?c 10 8 6 4 2 (1) (2) gate-source voltage v gs ( v ) drain current i d ( a ) v ds =25v t c =25?c 0 0.5 1.0 1.5 2.0 2.5 3.0 024681012 drain-source voltage v ds ( v ) input capacitance, output capacitance, c iss , c oss , c rss (p f ) feedback capacitance 1 10 0 50 100 150 200 1000 30 3 100 300 c iss c oss c rss f=1mhz t c =25?c drain current i d ( a ) switching time t on , t f , t d(off) ( ns ) v dd =200v v gs =10v t c =25?c 0 0 0.5 1.0 1.5 2.0 2.5 20 40 60 80 100 120 t d (off) t on t f 0 10 20 30 40 50 020 40 60 80 100 120 140 160 ambient temperature ta ( ?c ) allowable power dissipation p d ( w ) (1) t c =ta (2) without heat sink (p d =2w) (1) (2) 0.01 1 0.1 1 10 100 0.03 0.3 3 30 10 100 1000 3 30 300 drain-source voltage v ds ( v ) drain current i d ( a ) non repetitive pulse t c =25?c i dp i d dc t=10ms t=1ms t=100ms t=100ms junction temperature t j (?c) avalanche energy capability eas ( mj ) 0 30 25 20 15 10 5 25 150 125 100 75 50 i d =2a 0
power f-mos fets 2sk1834 v ds, v gs C q g switching measurement circuit avalanche capability test circuit v dd r l r g d.u.t pg v dd l d.u.t r g pg gate charge amount q g ( nc ) drain-source voltage v ds ( v ) 0 100 200 300 400 500 600 700 0 2 4 6 8 10 12 14 0 5 10 15 20 25 gate-source voltage v gs ( v ) v ds v gs
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